| 摘要 |
<p>The embodiment of the present invention provides a light emitting device which includes a first conductive semiconductor layer, an active layer which is arranged on the first conductive semiconductor layer, an electron blocking layer which is arranged on the active layer, an interface layer which is arranged on the electron blocking layer, and a second conductive semiconductor layer which is arranged on the interface layer. Wherein, the energy band gap of the interface layer is smaller than the energy band gap of the electron blocking layer and is larger than the energy band gap of the second conductive semiconductor layer.</p> |
