SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To easily form a semiconductor device including a plurality of capacitors having different characteristics respectively.SOLUTION: A capacity cell 60 works as a ferroelectric capacitor by a second dielectric 64 interposed between a second electrode 63 and a third electrode 65. The second dielectric 64 of the capacity cell 60 is formed by patterning a dielectric film formed on a conductor film for forming an upper electrode 53 included in a cell capacitor 50 of a memory cell. Accordingly, a capacity cell 60 having a high withstand voltage can be obtained by setting the film thickness of the second dielectric 64 at a value that is different from the film thickness of a ferroelectric 52 of the cell capacitor 50. In addition, the ferroelectric 52 of the cell capacitor 50 is formed into a thin film to obtain a cell capacitor 50.