发明名称 SPUTTERING APPARATUS AND THIN FILM FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To reduce the influence of a standing wave on a thin film formation in a sputtering construction method.SOLUTION: In a sputtering apparatus 1, a transparent web 9 is transported in a pressure-reduced chamber 14. A thin film is continuously formed on the web 9 by a sputtering part 12. A DC voltage and a high-frequency voltage are superposed and applied between the web 9 and a target material. A measurement part 13 measures the transmissivity of the web 9 just after the thin film has been formed. The transmissivity is measured at a plurality of positions in the width direction of the web 9. A gas supply control part 171 feedback-controls an additive gas supply part 152 in such a way that the dispersion of a plurality of transmissivities may be reduced. The additive gas supply part 152 changes the supply amount of at least one of an oxygen gas and a hydrogen gas. As a result, it is possible to reduce the influence of a standing wave due to a high frequency voltage on a thin film formation.
申请公布号 JP2015045037(A) 申请公布日期 2015.03.12
申请号 JP20130175544 申请日期 2013.08.27
申请人 HITACHI ZOSEN CORP 发明人 YOKOYAMA MASAHIDE
分类号 C23C14/34 主分类号 C23C14/34
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