SOLID-STATE IMAGE-CAPTURING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To achieve appropriate generation of a fine pixel signal.SOLUTION: A solid-state image-capturing device includes: a charge storage unit formed on a first semiconductor substrate to store a photoelectrically-converted charge; a charge retention unit formed on a second semiconductor substrate to retain the charge stored in the charge storage unit; and a transfer transistor formed on the first semiconductor substrate and the second semiconductor substrate to transfer the charge stored in the charge storage unit to the charge retention unit. The junction interface between the first semiconductor substrate and the second semiconductor substrate is formed in a channel of the transfer transistor.