发明名称 |
MEMORY DEVICE COMPRISING DOUBLE CASCODE SENSE AMPLIFIERS |
摘要 |
A memory device comprising a memory array comprising a plurality of memory cells, a plurality of bitlines and a plurality of wordlines for writing to the plurality of memory cells and a sense amplifier coupled to a first bitline of the plurality of bitlines, for reading the contents of a selected memory cell, the sense amplifier comprising a first cascode transistor pair coupled to a second cascode transistor pair, the first cascode transistor pair coupled to the first bitline and a second bitline, and a current comparator coupled to a drain side of the second cascode transistor pair for determining a value of the selected memory cell. |
申请公布号 |
US2015071011(A1) |
申请公布日期 |
2015.03.12 |
申请号 |
US201414193708 |
申请日期 |
2014.02.28 |
申请人 |
Sony Corporation |
发明人 |
Tedrow Kerry |
分类号 |
G11C7/06 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
1. A memory device comprising:
a memory array comprising a plurality of memory cells; a plurality of bitlines and a plurality of wordlines for writing to the plurality of memory cells; and a sense amplifier coupled to a first bitline of the plurality of bitlines, for reading the contents of a selected memory cell, the sense amplifier comprising:
a first cascode transistor pair coupled to a second cascode transistor pair, the first cascode transistor pair coupled to the first bitline and a second bitline; anda current comparator coupled to a drain side of the second cascode transistor pair for determining a value of the selected memory cell. |
地址 |
Tokyo JP |