SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME

摘要

A semiconductor memory device according to an embodiment includes a semiconductor layer, a gate electrode, a ferroelectric film provided between the semiconductor layer and the gate electrode, a first impurity region of a first conductivity type provided on one side of the gate electrode in the semiconductor layer, a second impurity region of a second conductivity type provided on the other side of the gate electrode in the semiconductor layer, a third impurity region of the first conductivity type provided between the first impurity region and the second impurity region in the semiconductor layer facing the gate electrode and having a lower first-conductivity-type impurity concentration than the first impurity region, a first wiring connected to the first impurity region through a connection portion contacting with the first impurity region, and a second wiring connected to the second impurity region through a connection portion contacting with the second impurity region.

主权项

1. A semiconductor memory device comprising:
a semiconductor layer; a gate electrode; a ferroelectric film provided between the semiconductor layer and the gate electrode; a first impurity region of a first conductivity type provided on one side of the gate electrode in the semiconductor layer; a second impurity region of a second conductivity type provided on the other side of the gate electrode in the semiconductor layer; a third impurity region of the first conductivity type provided between the first impurity region and the second impurity region in the semiconductor layer, the third impurity region facing the gate electrode and having a lower first-conductivity-type impurity concentration than the first impurity region; a first wiring connected to the first impurity region through a first connection portion, the first connection portion contacting with the first impurity region; and a second wiring connected to the second impurity region through a second connection portion, the second connection portion contacting with the second impurity region.