| 发明名称 |
WAFER-BASED LIGHT SOURCE PARAMETER CONTROL |
| 摘要 |
A photolithography method includes instructing an optical source to produce a pulsed light beam; scanning the pulsed light beam across a wafer of a lithography exposure apparatus to expose the wafer with the pulsed light beam; during scanning of the pulsed light beam across the wafer, receiving a characteristic of the pulsed light beam at the wafer; receiving a determined value of a physical property of a wafer for a particular pulsed light beam characteristic; and based on the pulsed light beam characteristic that is received during scanning and the received determined value of the physical property, modifying a performance parameter of the pulsed light beam during scanning across the wafer. |
| 申请公布号 |
US2015070673(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201414295558 |
申请日期 |
2014.06.04 |
| 申请人 |
Cymer, LLC |
发明人 |
Lalovic Ivan;Zurita Omar;Rechtsteiner Gregory Allen;Alagna Paolo;Hsieh Simon;Lee Jason J.;Rokitski Rostislav;Jiang Rui |
| 分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A photolithography method comprising:
instructing an optical source to produce a pulsed light beam; scanning the pulsed light beam across a wafer of a lithography exposure apparatus to expose the wafer with the pulsed light beam; during scanning of the pulsed light beam across the wafer, receiving a characteristic of the pulsed light beam at the wafer; receiving a determined value of a physical property of a wafer for a particular pulsed light beam characteristic; and based on the pulsed light beam characteristic that is received during scanning and the received determined value of the physical property, modifying a performance parameter of the pulsed light beam during scanning across the wafer. |
| 地址 |
San Diego CA US |
