发明名称 RF AMPLIFICATION DEVICE WITH POWER PROTECTION DURING HIGH SUPPLY VOLTAGE CONDITIONS
摘要 Radio frequency (RF) amplification devices are disclosed along with methods of providing power to an RF signal. In one embodiment, an RF amplification device includes an RF amplification circuit and a voltage regulation circuit. The RF amplification circuit includes a plurality of RF amplifier stages coupled in cascade. The voltage regulation circuit is coupled to provide a regulated voltage to a driver RF amplifier stage. The voltage regulation circuit is configured to generate the regulated voltage so that the maximum output power of the RF amplification circuit is provided approximately at a first power level while the supply voltage is above a threshold voltage level. The first power level should be within the physical capabilities of the RF amplification circuit, and thus, the RF amplification circuit is prevented from being damaged once the supply voltage is above the threshold voltage level.
申请公布号 US2015070098(A1) 申请公布日期 2015.03.12
申请号 US201414478822 申请日期 2014.09.05
申请人 RF Micro Devices, Inc. 发明人 Ngo David Q.;Thomas Michael B.;Nadimpalli Praveen Varma
分类号 H03F1/02;H03F3/19;H03F3/21 主分类号 H03F1/02
代理机构 代理人
主权项 1. A radio frequency (RF) amplification device comprising: an RF amplification circuit comprising a plurality of RF amplifier stages coupled in cascade such that each of the plurality of RF amplifier stages is operable to provide amplification to an RF signal, the plurality of RF amplifier stages comprising at least a driver RF amplifier stage and a final RF amplifier stage; a voltage regulation circuit coupled to provide a regulated voltage to the driver RF amplifier stage such that a maximum output power of the RF amplification circuit is set based on the regulated voltage, wherein the voltage regulation circuit is configured to generate the regulated voltage from a supply voltage so that the regulated voltage is driven approximately to a first voltage level while the supply voltage is below a threshold voltage level and so that the regulated voltage is driven below the first voltage level such that the maximum output power of the RF amplification circuit is provided approximately at a first power level while the supply voltage is above the threshold voltage level.
地址 Greensboro NC US