| 发明名称 |
SUPERJUNCTION STRUCTURES FOR POWER DEVICES AND METHODS OF MANUFACTURE |
| 摘要 |
A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the plurality of implant regions of second conductivity type. |
| 申请公布号 |
US2015069567(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201414491653 |
申请日期 |
2014.09.19 |
| 申请人 |
Fairchild Semiconductor Corporation |
发明人 |
Yedinak Joseph A.;Rexer Christopher L.;Rinehimer Mark L.;Shenoy Praveen Muraleedharan;Lee Jaegil;Yilmaz Hamza;Yun Chongman;Reichl Dwayne S.;Pan James;Ridley Rodney S.;Heidenreich Harold |
| 分类号 |
H01L29/06;H01L29/78;H01L29/74;H01L29/739 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power device comprising:
a semiconductor region including a plurality of alternately arranged pillars of first and second conductivity type, each of the plurality of pillars of second conductivity type comprising: a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the plurality of implant regions of second conductivity type. |
| 地址 |
San Jose CA US |
