| 发明名称 |
MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element. |
| 申请公布号 |
US2015069557(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201414202802 |
申请日期 |
2014.03.10 |
| 申请人 |
NAKAYAMA Masahiko;YOSHIKAWA Masatoshi;KAI Tadashi;HASHIMOTO Yutaka;TOKO Masaru;YODA Hiroaki;OH Jae Geun;LEE Keum Bum;RYU Choon Kun;LEE Hyung Suk;KIM Sook Joo |
发明人 |
NAKAYAMA Masahiko;YOSHIKAWA Masatoshi;KAI Tadashi;HASHIMOTO Yutaka;TOKO Masaru;YODA Hiroaki;OH Jae Geun;LEE Keum Bum;RYU Choon Kun;LEE Hyung Suk;KIM Sook Joo |
| 分类号 |
H01L43/02;H01L43/12 |
主分类号 |
H01L43/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetoresistive element comprising:
a reference layer; a tunnel barrier layer; a storage layer comprising a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element; and a cap layer comprising a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element. |
| 地址 |
Seoul KR |
