| 发明名称 |
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, SCHOTTKY BARRIER DIODE, AND FIELD EFFECT TRANSISTOR |
| 摘要 |
A semiconductor device includes: a base; an electron transit layer layered on the base; an electron-supplying layer being configured by layering a plurality of AlN layers and GaN layers alternately on the electron transit layer and having an average Al composition x; an etching sacrificial layer layered on the electron-supplying layer and made of AlyGa1-yN (0<y<1) having an Al composition y; a field plate layer layered on the etching sacrificial layer and made of AlzGa1-zN (0≦z<1, z<y) having an Al composition z; and an electrode connected to the etching sacrificial layer and being provided in an area in which a part of the field plate layer is removed until reaching the etching sacrificial layer. |
| 申请公布号 |
US2015069410(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201414547666 |
申请日期 |
2014.11.19 |
| 申请人 |
FURUKAWA ELECTRIC CO., LTD. |
发明人 |
UMENO Kazuyuki;Kambayashi Hiroshi;Takaki Keishi |
| 分类号 |
H01L29/778;H01L29/201;H01L29/205;H01L21/306;H01L29/872;H01L29/47;H01L21/02;H01L21/28;H01L29/20;H01L29/40 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a base; an electron transit layer layered on the base; an electron-supplying layer configured by layering each of a plurality of AlN layers and each of a plurality of GaN layers alternately on the electron transit layer, the electron-supplying layer having an average Al composition x; an etching sacrificial layer layered on the electron-supplying layer and made of AlyGa1-yN (0<y<1) having an Al composition y; a field plate layer layered on the etching sacrificial layer and made of AlzGa1-zN (0≦z<1, z<y) having an Al composition z; and an electrode connected to the etching sacrificial layer and being provided in an area in which a part of the field plate layer is removed until reaching the etching sacrificial layer. |
| 地址 |
Tokyo JP |
