METHOD FOR PRODUCING BULK SILICON CARBIDE

摘要

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material.

主权项

1. A method of forming silicon carbide comprising the steps of
i) providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation, the hot zone comprising
a) a crucible having an upper region and a lower region;b) a crucible cover sealing the crucible;c) a substantially solid silicon carbide precursor positioned in the lower region of the crucible; andd) a seed module positioned in the upper region of the crucible, the seed module comprising a silicon carbide seed having a top surface and a bottom surface exposed to the upper region of the crucible, the bottom surface facing the substantially solid silicon carbide precursor, ii) heating the hot zone with the heating element to sublimate the substantially solid silicon carbide precursor, and iii) forming silicon carbide on the bottom surface of the silicon carbide seed.