METHOD FOR DEPOSITING OXIDE LAYER, AND LAYERED SUBSTRATE FOR EPITAXIAL GROWTH AND PROCESS FOR PRODUCING SAME

摘要

The purpose of the present invention is to provide a method for depositing an oxide layer on a metal substrate, the method being capable of forming the oxide layer which has more improved crystal orientation than the outermost layer of the metal substrate. The method comprises depositing an oxide layer on a metal substrate (20) by RF magnetron sputtering, and is characterized by including a step in which a metal substrate (20) which has undergone crystal orientation and in which the outermost layer has a degree of c-axis orientation of 99% or higher is subjected to RF magnetron sputtering while setting an angle (α) at 15° or less, the angle (α) being formed by the perpendicular from the deposition position (20a) on the metal substrate (20) to the target (10) and the line extending from the deposition position (20a) to the point (10a) within the target (10) at which the magnetic-flux density in the perpendicular direction is zero and which is located nearest to the deposition position (20a).