| 摘要 |
PROBLEM TO BE SOLVED: To provide a module procedure for reducing flicker noise in a metal oxide semiconductor field effect transistor (MOSFET), of a device for input/inputs of other analog and digital circuits such as rail-to-rail computing amplifier, mixer, ring oscillator and current mirror.SOLUTION: The module procedure selects one or more surface channels MOSFET in a device (1002) and converts the channel into an implanted channel MOSFET (1004). |
