| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device includes a substrate on which a plurality of contact regions are defined, a plurality of transistors formed in the plurality of contact regions, a support body formed over the plurality of transistors and including a top surface, portions of which have different heights in the plurality of contact regions, a plurality of stacked structures including a plurality of conductive layers stacked over the support body, slits located between the plurality of stacked structures, first lines coupled to first junctions of the plurality of transistors through the slits, and second lines coupled to second junctions of the plurality of transistors through the slits. |
| 申请公布号 |
US2015069616(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201414222304 |
申请日期 |
2014.03.21 |
| 申请人 |
SK hynix Inc. |
发明人 |
OH Sung Lae;SON Chang Man;SUNG Sang Hyun;KIM Jin Ho |
| 分类号 |
H01L23/48;H01L21/768 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate on which a plurality of contact regions are defined; a plurality of transistors formed in the plurality of contact regions; a support body formed over the plurality of transistors and including a top surface, portions of which have different heights in the plurality of contact regions; a plurality of stacked structures including a plurality of conductive layers stacked over the support body; slits located between the plurality of stacked structures; first lines coupled to first junctions of the plurality of transistors through the slits; and second lines coupled to second junctions of the plurality of transistors through the slits. |
| 地址 |
Gyeonggi-do KR |
