| 发明名称 |
SEMICONDUCTOR STORAGE DEVICE |
| 摘要 |
A semiconductor storage device includes a semiconductor substrate, first and second word lines that are stacked above the substrate, extend in a row direction, are electrically connected together, and are separated from each other by a first region, and third and fourth word lines that are stacked above the substrate, extend in the row direction, are electrically connected together, and are separated from each other by a second region. The position of the first region is offset with respect to a position of the second region in the row direction. |
| 申请公布号 |
US2015069496(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201414189892 |
申请日期 |
2014.02.25 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIGA Hidehiro |
| 分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor storage device comprising:
a semiconductor substrate; a plurality of first word lines that are stacked above the substrate and extend in a row direction; a plurality of second word lines that are stacked above the substrate, extend in the row direction, are electrically connected to the first word lines, and are separated from the first word lines by a first region; a plurality of third word lines that are stacked above the substrate and extend in the row direction; and a plurality of fourth word lines that are stacked above the substrate, extend in the row direction, are electrically connected to the third word lines, and are separated from the third word lines by a second region, wherein a position of the first region is offset with respect to a position of the second region in the row direction. |
| 地址 |
Tokyo JP |
