| 发明名称 |
THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A thin film transistor includes: a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer; and a pair of source region and drain region formed by doping both sides of the first semiconductor layer and the second semiconductor layer with impurities, and the source region includes a first source layer on the same plane as the first semiconductor layer and a second source layer on the same plane as the second semiconductor layer, and the drain region includes a first drain layer on the same plane as the first semiconductor layer and a second drain layer on the same plane as the second semiconductor layer, and only one of the first semiconductor layer and the second semiconductor layer is a transistor channel layer. |
| 申请公布号 |
US2015069399(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201414249329 |
申请日期 |
2014.04.09 |
| 申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
Cho Seung-Hwan;Shin Young Ki;Shim Dong Hwan;Khang Yoon Ho;Na Hyun Jae |
| 分类号 |
H01L29/786;H01L29/66 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film transistor, comprising:
a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; and a pair of source region and drain region formed by doping both sides of the first semiconductor layer and the second semiconductor layer with impurities, wherein the source region includes a first source layer on a same plane as the first semiconductor layer and a second source layer on a same plane as the second semiconductor layer, the drain region includes a first drain layer on the same plane as the first semiconductor layer and a second drain layer on the same plane as the second semiconductor layer, and only one of the first semiconductor layer and the second semiconductor layer is a transistor channel layer. |
| 地址 |
Yongin-City KR |
