| 发明名称 |
Smart Measurement Techniques to Enhance Inline Process Control Stability |
| 摘要 |
An integrated circuit includes a number of lateral diffusion measurement structures arranged on a silicon substrate. A lateral diffusion measurement structure includes a p-type region and an n-type region which cooperatively span a predetermined initial distance between opposing outer edges of the lateral diffusion measurement structure. The p-type and n-type regions meet at a p-n junction expected to be positioned at a target junction location after dopant diffusion has occurred. |
| 申请公布号 |
US2015069395(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201314024688 |
申请日期 |
2013.09.12 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Yang Han-Wei;Lin Yi-Ruei;Lai Chen-Chung;Kuo Kang-Min;Tien Bor-Zen |
| 分类号 |
H01L23/544;H01L29/08;H01L21/66 |
主分类号 |
H01L23/544 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit, comprising:
a plurality of lateral diffusion measurement structures arranged on a silicon substrate, wherein a lateral diffusion measurement structure includes a p-type region and an n-type region which cooperatively span a predetermined initial distance between opposing outer edges of the lateral diffusion measurement structure; and wherein the p-type and n-type regions meet at a p-n junction expected to be positioned at a target junction location after dopant diffusion has occurred. |
| 地址 |
Hsin-Chu TW |
