METHOD AND SYSTEM FOR NON-DESTRUCTIVE DISTRIBUTION PROFILING OF AN ELEMENT IN A FILM

摘要

A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.

主权项

1. A method comprising:
obtaining a intensity spectrum for an element in a sample film using a photoelectron spectroscopy system and using a constant emission angle; determining a centroid value for said element in said sample film using said intensity spectrum, wherein said method is non-destructive to said sample film; correlating said centroid value to one or more electrical parameters for said sample film; and performing at least one of monitoring one or more fabrication process for said sample film, controlling one or more electrical parameters for said sample film, engineering one or more fabrication process for said sample film, predicting one or more fabrication process for said sample film, and determining and correcting a dose for said element based on said determined centroid value.