发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for achieving a flexible active matrix type display device, and a method for reducing parasitic capacitance between wire formed in different layers.SOLUTION: A thin-film device formed on a first substrate is adhered and fixed to a second substrate, and then the first substrate is removed and wire and the like are formed on the thin-film device. After that, the second substrate is also removed, and thus a flexible active matrix type display device is formed. After the first substrate is removed, the wire is formed on a side not formed with a gate electrode of an active layer, thereby reducing parasitic capacitance.
申请公布号 JP2015046606(A) 申请公布日期 2015.03.12
申请号 JP20140202761 申请日期 2014.10.01
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 ISHIKAWA AKIRA
分类号 H01L21/02;G02F1/1333;G02F1/1368;G09F9/30;H01L21/336;H01L21/77;H01L21/8238;H01L21/84;H01L27/08;H01L27/092;H01L27/12;H01L27/32;H01L29/786;H01L51/50;H05B33/10;H05B33/12;H05B33/14;H05B33/22 主分类号 H01L21/02
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