MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

摘要

A magnetoresistive element (10) comprises a first magnetic layer (1), a second magnetic layer (2), a first nonmagnetic layer (3), a second nonmagnetic layer (4), and a third magnetic layer (5). The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction and includes a nonmagnetic material film (22, 24, 26) and a magnetic material film (23, 25). The first nonmagnetic layer is arranged between the first magnetic layer and the second magnetic layer. The second nonmagnetic layer is arranged on a surface of the second magnetic layer. The third magnetic layer is arranged on a surface of the second nonmagnetic layer. The second nonmagnetic layer is in contact with the nonmagnetic material film (26) included in the second magnetic layer.