| 发明名称 |
III NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME |
| 摘要 |
Provided are a III nitride semiconductor device which can be operated at a lower voltage can be provided, in which device a good ohmic contact is achieved between the (000-1) plane side of the III nitride semiconductor layer and the electrode and a method of producing the III nitride semiconductor device. A III nitride semiconductor device of the present invention includes a plurality of protrusions rounded like domes in a predetermined region on the (000-1) plane side of the III nitride semiconductor layer; and an electrode on the upper surface of the predetermined region. |
| 申请公布号 |
US2015069583(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201214369584 |
申请日期 |
2012.12.12 |
| 申请人 |
DOWA ELECTRONICS MATERIALS CO.,LTD. |
发明人 |
Kadowaki Yoshitaka;Toyota Tatsunori |
| 分类号 |
H01L29/20;H01L29/06;H01L21/28;H01L21/02;H01L21/306;H01L29/04;H01L29/45 |
主分类号 |
H01L29/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A III nitride semiconductor device having a III nitride semiconductor layer, comprising:
a plurality of protrusions rounded like domes in a predetermined region on the (000-1) side of the III nitride semiconductor layer; and an electrode on the upper surface of the predetermined region. |
| 地址 |
Tokyo JP |
