| 发明名称 |
SEMICONDUCTOR DEVICE WITH REDUCED ELECTRICAL RESISTANCE AND CAPACITANCE |
| 摘要 |
A semiconductor device includes a first type region including a first conductivity type. The semiconductor device includes a second type region including a second conductivity type. The semiconductor device includes a channel region extending between the first type region and the second type region. The channel region is separated a first distance from a first portion of the first type region. The semiconductor device includes a gate region surrounding the channel region. A first portion of the gate region is separated a second distance from the first portion of the first type region. The second distance is greater than the first distance. |
| 申请公布号 |
US2015069475(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201314025041 |
申请日期 |
2013.09.12 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
Colinge Jean-Pierre;Ching Kuo-Cheng;Guo Ta-Pen;Diaz Carlos H. |
| 分类号 |
H01L29/78;H01L21/28 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first type region comprising a first conductivity type; a second type region comprising a second conductivity type; a channel region extending between the first type region and the second type region, the channel region separated a first distance from a first portion of the first type region; and a gate region surrounding the channel region, a first portion of the gate region separated a second distance from the first portion of the first type region, wherein the second distance is greater than the first distance. |
| 地址 |
Hsin-Chu TW |
