| 发明名称 |
SCHOTTKY BARRIER DIODE AND METHOD FOR MANUFACTURING SCHOTTKY BARRIER DIODE |
| 摘要 |
A Schottky barrier diode and a method of manufacturing the Schottky barrier diode are provided. The diode includes an n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate and having an upper surface, a lower surface, and an inclined surface that connects the upper surface and the lower surface. A p region is disposed on the inclined surface of the n− type epitaxial layer and a Schottky electrode is disposed on the upper surface of the n− type epitaxial layer and the p region. In addition, an ohmic electrode is disposed on a second surface of the n+ type silicon carbide substrate. |
| 申请公布号 |
US2015069412(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201314143735 |
申请日期 |
2013.12.30 |
| 申请人 |
Hyundai Motor Company |
发明人 |
Lee Jong Seok;Hong Kyoung-Kook;Chun Dae Hwan;Jung Youngkyun |
| 分类号 |
H01L29/872;H01L29/66 |
主分类号 |
H01L29/872 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A Schottky barrier diode, comprising:
an n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate and having an upper surface, a lower surface, and an inclined surface that connects the upper surface and the lower surface; a p region disposed on the inclined surface of the n− type epitaxial layer; a Schottky electrode disposed on the upper surface of the n− type epitaxial layer and the p region; and an ohmic electrode disposed on a second surface of the of type silicon carbide substrate. |
| 地址 |
Seoul KR |
