发明名称 |
PECVD MICROCRYSTALLINE SILICON GERMANIUM (SIGE) |
摘要 |
Embodiments of the present invention generally relate to methods for forming a SiGe layer. In one embodiment, a seed SiGe layer is first formed using plasma enhanced chemical vapor deposition (PECVD), and a bulk SiGe layer is formed directly on the PECVD seed layer also using PECVD. The processing temperature for both seed and bulk SiGe layers is less than 450 degrees Celsius. |
申请公布号 |
WO2015034653(A1) |
申请公布日期 |
2015.03.12 |
申请号 |
WO2014US51301 |
申请日期 |
2014.08.15 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CHI, HYO-IN;TAJIK, FARZAD DEAN;ROSA, MICHEL ANTHONY |
分类号 |
C23C16/50;C23C16/52;H01L21/205 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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