| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a crystalline oxide semiconductor film which can be used as a semiconductor film of a transistor or the like, and in particular, to provide a crystalline oxide semiconductor film having few defects such as grain boundaries.SOLUTION: A method for forming an oxide semiconductor film is performed in a deposition chamber including a substrate and a target containing a crystalline In-Ga-Zn oxide, while the pressure in the deposition chamber is p and the distance between the target and the substrate is d. In the method, the product of the pressure p and the distance d between the target and the substrate is 0.096 Pa m or more when the atomic ratio of Zn to In in the target is 1 or less, while the product of the pressure p and distance d between the target and the substrate is less than 0.096 Pa m when the atomic ratio of Zn to In in the target is more than 1, an ion is made collide with the target to separate a sputtered particle including a flat plate-like In-Ga-Zn oxide particle, and a flat plate-like In-Ga-Zn oxide is deposited over the substrate while crystallinity is kept.</p> |
