发明名称 BIAS-BOOSTING BIAS CIRCUIT FOR RADIO FREQUENCY POWER AMPLIFIER
摘要 <p>PROBLEM TO BE SOLVED: To provide a bias circuit for a radio frequency (RF) power amplifier (PA) which supplies a direct current (DC) bias voltage, with bias boosting, to the RF power amplifier.SOLUTION: A bias circuit 104 includes a bias transistor 128 (Q2) that forms a current mirror with an amplifier transistor 116 (Q1) of an RF power amplifier 102. The bias circuit further includes a first resistor 132 (R1) coupled between a gate terminal and a drain terminal of the bias transistor to block RF signals from the gate terminal of the bias transistor. The bias circuit further includes a second resistor 136 (R2) coupled between the drain terminal of the bias transistor and the RF power amplifier (e.g., a gate terminal of the amplifier transistor). An amount of boosting of the DC bias voltage supplied by the bias circuit is based on an impedance value of the second resistor.</p>
申请公布号 JP2015046876(A) 申请公布日期 2015.03.12
申请号 JP20140166384 申请日期 2014.08.19
申请人 TRIQUINT SEMICONDUCTOR INC 发明人 LUO SIFEN;KERRY BURGER;GEORGE NOHRA
分类号 H03F3/24;H03F3/343 主分类号 H03F3/24
代理机构 代理人
主权项
地址