发明名称 |
High-Mobility Multiple-Gate Transistor with Improved On-to-Off Current Ratio |
摘要 |
A multi-gate transistor includes a semiconductor fin over a substrate. The semiconductor fin includes a central fin formed of a first semiconductor material; and a semiconductor layer having a first portion and a second portion on opposite sidewalls of the central fin. The semiconductor layer includes a second semiconductor material different from the first semiconductor material. The multi-gate transistor further includes a gate electrode wrapping around sidewalls of the semiconductor fin; and a source region and a drain region on opposite ends of the semiconductor fin. Each of the central fin and the semiconductor layer extends from the source region to the drain region. |
申请公布号 |
US2015072495(A1) |
申请公布日期 |
2015.03.12 |
申请号 |
US201414546031 |
申请日期 |
2014.11.18 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Ko Chih-Hsin;Wann Clement Hsingjen |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method comprising:
forming a semiconductor fin comprising:
forming a semiconductor layer comprising a first portion and a second portion on opposite sidewalls of a central fin, wherein the central fin comprises a first semiconductor material, and the semiconductor layer comprises a second semiconductor material different from the first semiconductor material; forming a gate electrode on sidewalls of the semiconductor fin; and forming a source region and a drain region on opposite ends of the semiconductor fin, wherein each of the central fin and the semiconductor layer extends from the source region to the drain region. |
地址 |
Hsin-Chu TW |