NON-VOLATILE MEMORY, METHOD OF OPERATING THE SAME, MEMORY SYSTEM INCLUDING THE SAME, AND METHOD OF OPERATING THE SYSTEM

摘要

A nonvolatile memory device includes an array of nonvolatile memory cells and a plurality of page buffers configured to receive a plurality of pages of data read from the same page in the array using different read voltage conditions. A control circuit is provided, which is electrically coupled to the plurality of page buffers. The control circuit is configured to perform a test operation by driving the plurality of page buffers with control signals that cause generation within the nonvolatile memory device of a string of XOR data bits, which are derived from a comparison of at least two of the multiple pages of data read from the same page of nonvolatile memory cells using the different read voltage conditions. An input/output device is provided, which is configured to output test data derived from the string of XOR data bits to another device located external to the nonvolatile memory device.

主权项

1. A nonvolatile memory device, comprising:
an array of nonvolatile memory cells; a plurality of page buffers configured to receive a corresponding plurality of pages of data read from the same page of nonvolatile memory cells in said array using different read voltage conditions for each of the plurality of pages of data being read; a control circuit electrically coupled to said plurality of page buffers, said control circuit configured to perform a test operation by driving said plurality of page buffers with control signals that cause generation within the nonvolatile memory device of a string of XOR data bits that are derived from a comparison of at least two of the multiple pages of data read from the same page of nonvolatile memory cells using the different read voltage conditions; and an input/output device configured to output test data derived from the string of XOR data bits to another device located external to the nonvolatile memory device.