NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

A nonvolatile semiconductor memory device according to an embodiment comprises: a memory string including a first memory cell and a second memory cell; a first word line connected to a gate of the first memory cell; a second word line connected to a gate of the second memory cell; and a peripheral circuit configured to control a write sequence and a read sequence, the peripheral circuit, during the write sequence or the read sequence on the first memory cell, executing a first operation on the condition that a positive first pass voltage is applied to the first word line and the second word line.

主权项

1. A nonvolatile semiconductor memory device, comprising:
a memory string including a first memory cell and a second memory cell; a first word line connected to a gate of the first memory cell; a second word line connected to a gate of the second memory cell; and a peripheral circuit configured to control a write sequence and a read sequence, the peripheral circuit, during the write sequence or the read sequence on the first memory cell, executing a first operation on the condition that a positive first pass voltage is applied to the first word line and the second word line.