发明名称 Linear Programming Based Decoding For Memory Devices
摘要 Technologies are generally described herein for linear programming based decoding for memory devices. In some examples, a cell threshold voltage level of a memory cell is detected. An interference voltage level of an interference cell that interferes with the memory cell can be determined. The cell threshold voltage level can be decoded in accordance with a set of beliefs to determine the value of the memory cell. The set of beliefs can include a minimization of an objective function of a linear program representing inter-cell interference between the memory cell and the interference cell.
申请公布号 US2015070985(A1) 申请公布日期 2015.03.12
申请号 US201414541588 申请日期 2014.11.14
申请人 Empire Technology Development LLC 发明人 Ma Xudong
分类号 G11C16/34 主分类号 G11C16/34
代理机构 代理人
主权项 1. A system to determine a value of a memory cell, the system comprising: a memory; and a controller configured to: detect a cell threshold voltage level of a memory cell of the memory,determine an interference voltage level of an interference cell of the memory that interferes with the memory cell, anddecode the cell threshold voltage level in accordance with a set of probabilities to determine the value of the memory cell, the set of probabilities associated with a minimization of a linear program that represents inter-cell interference between the memory cell and the interference cell.
地址 Wilmington DE US