| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
According to one embodiment, a semiconductor device includes a MRAM chip including a semiconductor substrate and a memory cell array area includes magnetoresistive elements which are provided on the semiconductor substrate, and a magnetic shield layer separated from the MRAM chip, surrounding the memory cell array area in a circumferential direction of the MRAM chip, and having a closed magnetic path. |
| 申请公布号 |
US2015069545(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201414166703 |
申请日期 |
2014.01.28 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NOMA Kenji |
| 分类号 |
H01L23/552;H01L43/12;H01L43/02 |
主分类号 |
H01L23/552 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
an MRAM chip including a semiconductor substrate and a memory cell array area comprising magnetoresistive elements which are provided on the semiconductor substrate; and a magnetic shield layer separated from the MRAM chip, surrounding the memory cell array area in a circumferential direction of the MRAM chip, and having a closed magnetic path. |
| 地址 |
Tokyo JP |
