INTEGRATED CIRCUITS HAVING LATERALLY CONFINED EPITAXIAL MATERIAL OVERLYING FIN STRUCTURES AND METHODS FOR FABRICATING SAME

摘要

Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a fin structure overlying a semiconductor substrate. The fin structure defines a fin axis extending in a longitudinal direction perpendicular to a lateral direction and has two fin sidewalls parallel to the fin axis. The method includes forming gate structures overlying the fin structure and transverse to the fin axis. Further, the method includes growing an epitaxial material on the fin structure and confining growth of the epitaxial material in the lateral direction.

主权项

1. A method for fabricating an integrated circuit comprising:
providing a fin structure overlying a semiconductor substrate, wherein the fin structure defines a fin axis extending in a longitudinal direction perpendicular to a lateral direction, wherein the fin structure has two fin sidewalls parallel to the fin axis, and wherein the fin structure has a top surface extending between the fin sidewalls; forming gate structures overlying the fin structure and transverse to the fin axis; and growing an epitaxial material on the top surface of the fin structure while preventing growth of the epitaxial material on the fin sidewalls and confining growth of the epitaxial material over the top surface in the lateral direction.