ELIMINATING SHORTING BETWEEN FERROELECTRIC CAPACITORS AND METAL CONTACTS DURING FERROELECTRIC RANDOM ACCESS MEMORY FABRICATION

摘要

Disclosed herein is an apparatus that includes a ferrocapacitor having a sidewall. An etch stopping film is disposed along the sidewall of the ferrocapacitor, with a hydrogen barrier film disposed between the etch stopping film and the sidewall of the ferrocapacitor.

主权项

1. An apparatus comprising:
a first ferrocapacitor having a first sidewall; a hydrogen barrier film disposed along the first sidewall of the first ferrocapacitor, the hydrogen barrier film having an outer surface and an inner surface, wherein the inner surface of the hydrogen barrier film is in contact with the first sidewall of the ferrocapacitor; and an etch stopping film disposed along the outer surface of the hydrogen barrier film, wherein the etch stopping film comprises titanium aluminum oxy-nitride (TiAlON), and wherein a nitrogen to oxygen ratio varies along a direction from an inner surface of the etch stopping film to an outer surface of the etch stopping film.