发明名称 |
LIGHT EMITTING DIODE |
摘要 |
A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of first three-dimensional nano-structures are located on the second surface of the first semiconductor layer. A number of second three-dimensional nano-structures are located on a surface of the active layer contacting the second semiconductor layer, and a cross section of each of the three-dimensional nano-structures is M-shaped. |
申请公布号 |
US2015069326(A1) |
申请公布日期 |
2015.03.12 |
申请号 |
US201414542645 |
申请日期 |
2014.11.16 |
申请人 |
Tsinghua University ;HOA HAI PRECISION INDUSTRY CO., LTD. |
发明人 |
ZHU ZHEN-DONG;LI QUN-QING;ZHANG LI-HUI;CHEN MO;FAN SHOU-SHAN |
分类号 |
H01L33/24;H01L33/06;H01L33/22 |
主分类号 |
H01L33/24 |
代理机构 |
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代理人 |
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主权项 |
1. A light emitting diode, comprising:
a substrate; a first semiconductor layer comprising a first surface contacting the substrate and a second surface opposite to the first surface; an active layer stacked on the second surface of the first semiconductor layer; a second semiconductor layer stacked on the active layer and comprising a light emitting surface away from the active layer; a first electrode electrically connected with the first semiconductor layer; a second electrode electrically connected with the second semiconductor layer; wherein a plurality of first three-dimensional nano-structures are located on the second surface of the first semiconductor layer, a plurality of second three-dimensional nano-structures are located on a surface of the active layer contacting the second semiconductor layer, wherein each of the plurality of first three-dimensional nano-structures and the plurality of second three-dimensional nano-structures comprises a first peak and a second peak, a first groove is defined between the first peak and the second peak, a second groove is defined between adjacent two of the plurality of first three-dimensional nano-structures and adjacent two of the plurality of second three-dimensional nano-structures, and a depth of the first groove is less than a depth of the second groove. |
地址 |
Beijing CN |