| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory device including a memory element capable of being operated by a thin film transistor of a low off-state current without problems.SOLUTION: A memory device comprises memory elements being equipped with at least one thin film transistor having an oxide semiconductor layer arranged in a matrix. The thin film transistor having the oxide semiconductor layer is high in field effect mobility and can reduce off-state current, and hence can be favorably operated without problems. In addition, it can reduce power consumption. Such a memory device is effective particularly when, for example, the thin film transistor having the oxide semiconductor layer is disposed in a pixel of a display device, because it can be formed on the same substrate as the memory device. |
