| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device that detects a temperature with high accuracy and detects overheat in quick response to heating of a transistor.SOLUTION: A lead 12 and bonding pads 14, 15 formed on a semiconductor chip 13 are interconnected by bonding wires 16, 17. A drain-source voltage V1 of a transistor 19 turned on is a value of dividing a voltage Vo of the lead 12 according to a resistance of the bonding wire 16 and an on resistance of the transistor 19. Since both resistances have different temperature coefficients, the voltage division ratio changes with temperature. A reference voltage V2 is a value of dividing the voltage Vo in a voltage division circuit 22, and the voltage division ratio is independent of temperature and constant. A comparator 27 outputs a temperature determination signal St at an L level indicating overheat on condition of V1≥V2. |
