| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve performance of a semiconductor device by preventing the occurrence of read noise in a pixel which composes an image pickup element.SOLUTION: In a semiconductor device, gate insulation films G1 of an amplification transistor AMI, a selection transistor and a reset transistor, which compose a pixel are composed of an insulation film ON and an La-containing capping film LA. By introducing La to the gate insulation film G1, a threshold voltage of each transistor is reduced thereby to prevent the occurrence of 1/f noise in a signal amplification operation and the like.</p> |
