| 摘要 |
<p>A non-volatile memory and a method for manufacturing the same are disclosed. The present invention can provide a resistance-variable non-volatile memory device which is made of a resistance-variable material, forms a resistance-variable layer by uniformly arranging a nano-particle having a predetermined diameter on a lower electrode, and forms a conductive filament inside the nano-particle, so that the conductive filament is uniformly formed on the resistance-variable layer, thereby ensuring a higher reliability. Further, the present invention can provide a resistance-variable non-volatile memory device in which a nano-particle having a predetermined diameter is uniformly arranged on a lower electrode and a resistance-variable layer filled with a resistance-variable material is formed therebetween, so that a conductive filament is uniformly formed between the uniformly-arranged nano-particles, thereby ensuring a higher reliability.</p> |
