发明名称 フォトマスクブランク、フォトマスク、反射型マスクブランクおよび反射型マスク並びにこれらの製造方法
摘要 <P>PROBLEM TO BE SOLVED: To provide a photomask blank capable of forming an extremely minute pattern, and to provide a photomask with a minute pattern formed on the photomask blank. <P>SOLUTION: The photomask blank has a light-shielding film comprising at least two layers on a transparent substrate. The light-shielding film includes a light-shielding layer made of a material mainly containing tantalum nitride and further containing xenon, and an antireflective layer laminated on the upper surface of the light-shielding layer and made of a material mainly containing tantalum oxide and further containing argon. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP5681668(B2) 申请公布日期 2015.03.11
申请号 JP20120123512 申请日期 2012.05.30
申请人 发明人
分类号 G03F1/54;C23C14/06;G03F1/22;G03F1/24;H01L21/027;H01L21/3065 主分类号 G03F1/54
代理机构 代理人
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