| 摘要 |
<p>A semiconductor device having a construction capable of achieving suppressed deterioration of electric characteristics in an insulating member is provided. An n- SiC layer (12), a source contact electrode (16) formed on a main surface of the n- SiC layer (12), a gate electrode (17) arranged at a distance from the source contact electrode (16) on the main surface of the n - SiC layer (12), and an interlayer insulating film (210) located between the source contact electrode (16) and the gate electrode (17) are provided. A rate of lowering in electric resistance in the interlayer insulating film (210) when heating to a temperature not higher than 1200°C is carried out while the source contact electrode (16) and the interlayer insulating film (210) are adjacent to each other is not higher than 5 %.</p> |
