发明名称 |
METHODS FOR PRODUCING NEW SILICON LIGHT SOURCE AND DEVICES |
摘要 |
The present invention relates to production method and device applications of a new silicon (Si) semiconductor light source that emits at a single wavelength at 1320 nm with a full width at half maximum (FWHM) of less than 200 nm and a photoluminescence quantum efficiency of greater than 50% at room temperature. The semiconductor that is the base for the new light source includes a surface which is treated by an acid vapor involving heavy water or Deuterium Oxide (D2O) and a surface layer producing the light source at 1320 nm. |
申请公布号 |
EP2845273(A1) |
申请公布日期 |
2015.03.11 |
申请号 |
EP20120726648 |
申请日期 |
2012.04.30 |
申请人 |
TUBITAK |
发明人 |
KALEM, SEREF |
分类号 |
H01S5/30;H01L21/28;H01L29/51;H01L33/34;H01S5/183;H01S5/22;H01S5/32 |
主分类号 |
H01S5/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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