GATE INSULATOR FILM, ORGANIC THIN FILM TRANSISTOR, AND METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR

摘要

The present invention provides a gate insulating film, which has no change in film quality due to heating or chemical treatment in forming an electrode or the like, and which is capable of maintaining high flatness in forming an organic semiconductor layer. The present invention also provides an organic thin film transistor using such a gate insulating film, and a manufacturing method thereof. According to embodiments of the present invention, a gate insulating film, an organic thin film transistor hardened by applying a composition onto a gate electrode, and a method for manufacturing the organic thin film transistor are provided. The composition comprises: (A) a compound obtained by reacting (a) dicarboxylic acid or tricarboxylic acid or its acid anhydride with (b) tetracarboxylic acid or its dianhydride within a range in which a molar ratio of a/b is from 0.1 to 10, with respect to a compound obtained by reacting bisphenol type epoxy compound with ethylenically unsaturated coupler-containing monocarboxylic acid; (B) polymeric monomer having at least one ethylenically unsaturated bond; and (C) epoxy compound.