| 摘要 |
<p>Methods of producing low resistivity tungsten bulk layers having lower roughness and higher reflectivity are provided. The smooth and highly reflective tungsten layers are easier to photopattern than conventional low resistivity tungsten films. The methods involve CVD deposition of tungsten in the presence of alternating nitrogen gas pulses, such that alternating portions of the film are deposited by CVD in the absence of nitrogen and in the presence of nitrogen. According to various embodiments, between 20-90% of the total film thickness is deposited by CVD in the presence of nitrogen.</p> |
