发明名称 |
TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES |
摘要 |
Embodiments relate to use of a particle accelerator beam to form thin films of material from a bulk substrate are described. In particular embodiments, a bulk substrate having a top surface is exposed to a beam of accelerated particles. In certain embodiments, this bulk substrate may comprise GaN; in other embodiments this bulk substrate may comprise (111) single crystal silicon. Then, a thin film or wafer of material is separated from the bulk substrate by performing a controlled cleaving process along a cleave region formed by particles implanted from the beam. In certain embodiments this separated material is incorporated directly into an optoelectronic device, for example a GaN film cleaved from GaN bulk material. In some embodiments, this separated material may be employed as a template for further growth of semiconductor materials (e.g. GaN) that are useful for optoelectronic devices. |
申请公布号 |
EP2845220(A1) |
申请公布日期 |
2015.03.11 |
申请号 |
EP20130784851 |
申请日期 |
2013.05.03 |
申请人 |
SILICON GENESIS CORPORATION |
发明人 |
HENLEY, FRANCOIS J.;KANG, SIEN;LAMM, ALBERT |
分类号 |
H01L21/30;C30B29/40;C30B33/06;H01L21/02;H01L21/762;H01L29/20 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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