| 摘要 |
<p>A process for forming a layer (26) of semiconductor material from a substrate (20), or donor substrate, made of the same semiconductor material is described, comprising: formation in said donor substrate of a high lithium concentration zone (22), with a concentration between 5×1018 atoms/cm3 and 5×1020 atoms/cm3, then a hydrogen implantation (24) in the donor substrate, in, or in the vicinity of, the high lithium concentration zone, application of a stiffener (19) with the donor substrate, application of a thermal budget to result in the detachment of the layer (34) defined by the implantation.</p> |
