| 摘要 |
Provided is a semiconductor device with high operation speed, superior switching properties, high integration, or a fine structure. A semiconductor layer having an opening part is formed on an insulating surface. After a conductive layer is formed in on the semiconductor layer and in the opening part, the conductive layer on the semiconductor layer is removed to form a conductive filter in the opening part. An island-shaped mask is formed on the conductive filler and the semiconductor layer. A first electrode and a first semiconductor are formed by etching the conductive filler and the semiconductor layer by using a mask. A gate insulating layer is formed on the upper surface and lateral surface of the first semiconductor. A gate electrode is formed to touch the upper part of the gate insulating layer and face the upper surface and lateral surface of the first semiconductor. |
