| 摘要 |
1,176,889. Semi-conductor arrangement. INTERNATIONAL BUSINESS MACHINES CORP. 23 Jan., 1968 [14 Feb., 1967], No. 3382/68. Heading H1K. [Also in Division C6] A pattern of conductivity is formed on an amorphous substrate by transforming selected portions on the surface thereof into crystalline form and electro-plating a conductive material on to said portions. The amorphous substrate may be of semi-conductor material, e.g. germanium or silicon, and may be doped. The selected portions may be transformed into crystalline form by heating said portions, e.g. with a laser beam or an electron beam. The plating may be carried out electrolytically, e.g. copper or silver may be electroplated on to a germanium substrate from cyanide baths. A doped amorphous substrate may be formed on a base material, e.g. of quartz, by vapour deposition of substrate and dopant from separate sources using rate monitoring devices to maintain the proper ratio between the two evaporations, or by using a doped starting material of such composition to give the required deposit (this will not be an identical composition). |
