VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

The vertical memory device includes a channel, which extends in a vertical direction with respect to the top surface of a substrate, and gate electrodes disposed on the outer sidewall of the channel. The gate electrodes includes a ground selection line (GSL), a word line, a string selection line (SSL) and a first dummy word line sequentially stacked from the top surface of the substrate in a first direction to be spaced apart from each other. The threshold voltage variation of the SSL may be reduced by the first dummy word line.