| 摘要 |
<p>According to one embodiment, a conductive bridging memory device includes a first wiring layer having a plurality of first wiring portions extending in a first direction, a second wiring layer having a plurality of second wiring portions extending in a second direction crossing the first direction, and a resistance change layer provided continuously along a plane having the first direction and the second direction between the first wiring layer and the second wiring layer. Each of the first wiring portions includes a first wiring extending in the first direction. Each of the second wiring portions includes a second wiring extending in the second direction, and an ion metal layer provided between the second wiring and the resistance change layer and extending in the second direction.</p> |
